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Microelectromechanical
Field Emission Devices |
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Ultra-dense
lateral FEA
- Atomically
sharp tips by DRIE and oxidation sharpening
- Vertical
tip separation <300 nm by DRIE
- Tip
Density ~ 1.5x108/cm2
- Self-aligned
sub-micron spaced electrodes by sacrificial oxide
spacing
- Applications
in ion gauges, microion-pumps, RF sources
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| V.
Milanovic, L. Doherty, D. Teasdale, S. Parsa, C. Zhang, and K.
Pister, ``Micromachining Technology for Lateral Field Emission
Devices,'' IEEE Tran. Electron Devices, vol. 48, no. 1, pp. 166-173,
Jan. 2001. |
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| V.
Milanovic, L. Doherty, D. Teasdale, C. Zhang, V. Nguyen, M. Last,
and K. Pister, ``Deep Reactive Ion Etching for Lateral Field Emission
Devices,'' IEEE Electron Device Letters, vol. 21, no. 5, May.
2000. |
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| V.
Milanovic, L. Doherty, D. Teasdale, S. Parsa, C. Zhang, and K.
Pister, ``Application of Micromachining Technologies to Lateral
Field Emission Devices,'‘ Digest of Solid-State Sensor and Actuator
Workshop, Hilton Head Isl., Jun. 2000. |
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